US Patent Issued to DYNAX SEMICONDUCTOR on Nov. 25 for "Epitaxial structure of semiconductor device and method of manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,653, issued on Nov. 25, was assigned to DYNAX SEMICONDUCTOR INC. (Kunshan, China).

"Epitaxial structure of semiconductor device and method of manufacturing the same" was invented by Hui Zhang (Kunshan, China), Shiqiang Li (Kunshan, China), Naiqian Zhang (Kunshan, China) and Yi Pei (Kunshan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure provide an epitaxial structure of a semiconductor device and a method of manufacturing the same. The epitaxial structure includes a substrate, and an epitaxial layer located on a side of the substrate, the epitaxial layer including a nucleation layer located on a side of th...