US Patent Issued to Dynax Semiconductor on May 13 for "Semiconductor device and preparation method thereof" (Chinese Inventor)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,622, issued on May 13, was assigned to Dynax Semiconductor Inc. (Suzhou, China).

"Semiconductor device and preparation method thereof" was invented by Shufeng Zhao (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a semiconductor device and a preparation method thereof. The semiconductor device includes a substrate, a multilayer semiconductor layer, a dielectric layer, a source and a drain. A gate trench is formed in the multilayer semiconductor layer and the dielectric layer. A gate is formed in the gate trench, and the gate trench includes a first sub-portion of the gate trench formed in the multilayer semiconductor layer...