ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,533, issued on Sept. 23, was assigned to DR. ING. H.C. F. PORSCHE AG (Stuttgart, Germany).
"Power semiconductor module" was invented by Maximilian Barkow (Stuttgart, Germany), Patrick Fuchs (Leonberg, Germany), Timijan Velic (Weissach, Germany), Bernd Eckardt (Erlangen, Germany), Maximilian Hofmann (Erlangen, Germany), Hubert Rauh (Erlangen, Germany), Andre Mueller (Erlangen, Germany), Benjamin Bayer (Erlangen, Germany) and Jordan Sorge (Erlangen, Germany).
According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor module includes a first and second insulating substrate, which is arranged parallel to and at a distance from the first insulat...