US Patent Issued to DOWA Electronics Materials on Dec. 23 for "Group III nitride semiconductor light-emitting element and method of manufacturing same" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,504, issued on Dec. 23, was assigned to DOWA Electronics Materials Co. Ltd. (Tokyo).

"Group III nitride semiconductor light-emitting element and method of manufacturing same" was invented by Yasuhiro Watanabe (Tokyo) and Takehiko Fujita (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A group III nitride semiconductor light-emitting element comprises, in the following order: an n-type group III nitride semiconductor layer; a group III nitride semiconductor laminated body obtained by alternately laminating a barrier layer and a well layer narrower in bandgap than the barrier layer in the stated order so that the number of barrier layers and the ...