US Patent Issued to DOWA Electronics Materials on April 1 for "Group III nitride semiconductor light emitting element and method of manufacturing the same" (Japanese Inventor)

ALEXANDRIA, Va., April 2 -- United States Patent no. 12,268,038, issued on April 1, was assigned to DOWA Electronics Materials Co. Ltd. (Tokyo).

"Group III nitride semiconductor light emitting element and method of manufacturing the same" was invented by Yasuhiro Watanabe (Akita, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The group III nitride semiconductor light emitting element according to this disclosure has, on a substrate, an n-type semiconductor layer, a light emitting layer, a p-type AlGaN electron blocking layer, a p-type contact layer and a p-side reflection electrode, in this order, wherein, a center emission wavelength of light emitted from the light emitting layer is 250 nm or greater ...