US Patent Issued to DONGWOO FINE-CHEM on July 15 for "Silicon etchant composition, pattern formation method and manufacturing method of array substrate using the etchant composition, and array substrate manufactured therefrom" (South Korean Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,359,125, issued on July 15, was assigned to DONGWOO FINE-CHEM Co. LTD. (Jeollabuk-do, South Korea).

"Silicon etchant composition, pattern formation method and manufacturing method of array substrate using the etchant composition, and array substrate manufactured therefrom" was invented by Jin-Kyu Roh (Seoul, South Korea), Ji-Won Kim (Daejeon, South Korea) and Woo-Jun Shin (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a silicon etchant composition comprising (A) an alkaline compound, (B) a metal salt, and (C) water, a pattern formation method and a manufacturing method of an array substrate using the...