ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,447,560, issued on Oct. 21, was assigned to DISCO Corp. (Tokyo).
"Manufacturing method of single crystal silicon substrate" was invented by Hayato Iga (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A manufacturing method of a single crystal silicon substrate includes a peeling layer forming step of forming, inside a workpiece, peeling layers that include modified portions and cracks propagating from the modified portions, and a separation step of separating the substrate from the workpiece using the peeling layers as starting points. The peeling layer forming step has a first processing step of forming some of the modified portions in first regio...