ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,716, issued on May 27, was assigned to DISCO Corp. (Tokyo).
"Wafer processing method" was invented by Shunichiro Hirosawa (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A wafer processing method includes the steps of forming a bonded wafer by bonding one surface of a first wafer which is chambered at an outer peripheral edge and includes a device region and an outer peripheral surplus region, to a second wafer, irradiating a laser beam along the outer peripheral edge of the first wafer and forming an annular modified region, thereby segmenting the first wafer into an outer peripheral annular portion and a central region, bonding an expand tap...