ALEXANDRIA, Va., June 17 -- United States Patent no. 12,311,470, issued on May 27, was assigned to DISCO Corp. (Tokyo).
"Method of processing monocrystalline silicon wafer" was invented by Hayato Iga (Tokyo), Kazuya Hirata (Tokyo) and Shunichiro Hirosawa (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A monocrystalline silicon wafer fabricated such that a particular crystal plane, e.g., a crystal plane (100), included in crystal planes {100} is exposed on each of face and reverse sides of the monocrystalline silicon wafer is irradiated with a laser beam along a first direction parallel to the particular crystal plane and inclined to a particular crystal orientation, e.g., a crystal orientation [010], i...