ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,763, issued on Jan. 27, was assigned to DISCO Corp. (Tokyo).
"Bonded wafer processing method" was invented by Hayato Iga (Tokyo) and Kazuya Hirata (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of processing a bonded wafer formed by bonding a first wafer and a second wafer to each other via a bonding layer includes a coordinate generating step of generating coordinates of an undersurface position of the first wafer, the undersurface position being to be irradiated with laser beams, such that an end position of a crack extending from modified layers formed within the first wafer is located at an outer circumference of the bonding laye...