ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,715, issued on Jan. 20, was assigned to DISCO Corp. (Tokyo).
"Processing method of bonded wafer" was invented by Hayato Iga (Tokyo) and Kazuya Hirata (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for processing a bonded wafer includes forming a plurality of modified layers in a form of rings through positioning focal points of laser beams with a wavelength having transmissibility with respect to a first wafer inside the first wafer, from which a chamfered part and a notch are to be removed, from a back surface of the first wafer and executing irradiation, holding a second wafer side on a chuck table, and grinding the back surface of...