ALEXANDRIA, Va., June 9 -- United States Patent no. 12,289,922, issued on April 29, was assigned to DISCO Corp. (Tokyo).
"Processing method" was invented by Hayato Iga (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A processing method for processing a single-crystal silicon wafer that has a first surface and a second surface formed in such a manner that a specific crystal plane included in a crystal plane {100} is exposed in each of the first and second surfaces and has devices formed in the respective regions marked out by planned dividing lines in the first surface. The method includes forming dividing origins along each planned dividing line, forming a separation layer along the crystal plane of th...