US Patent Issued to Diodes on Oct. 28 for "Power MOSFET with gate-source ESD diode structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,775, issued on Oct. 28, was assigned to Diodes Inc. (Plano, Texas).

"Power MOSFET with gate-source ESD diode structure" was invented by Wan-Yu Kai (New Taipei, Taiwan), Chia-Wei Hu (New Taipei, Taiwan) and Ta-Chuan Kuo (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus includes a drain and a source on opposing sides of an epitaxial layer, a body region and a plurality of gates formed in the epitaxial layer, an interlayer dielectric layer over the epitaxial layer, a gate-source electrostatic discharge (ESD) diode in the interlayer dielectric layer, a source contact connected to the source and a first terminal of the gate-...