US Patent Issued to Diodes on Nov. 11 for "Vertical power semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,347, issued on Nov. 11, was assigned to Diodes Inc. (Plano, Texas).

"Vertical power semiconductor device and manufacturing method thereof" was invented by Jie Li (New Taipei, Taiwan), Ming-Wei Tsai (New Taipei, Taiwan), Chiao-Shun Chuang (New Taipei, Taiwan) and Ching-Wen Wang (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate comprising a first surface and a second surface positioned on an opposite side of the substrate. A first gate structure is located above the first surface of the substrate and a second gate structure is located above the first surface of the substrate, adjacent to the...