ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,337, issued on May 20, was assigned to Diodes Inc. (Plano, Texas).
"Power semiconductor apparatus and bonding method thereof" was invented by Duane Wilcoxen (Dallas).
According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus includes a backside supporting layer having a first thickness, an adhesive layer over the backside supporting layer, a metal layer over the adhesive layer, wherein the metal layer functions as a backside connector, a semiconductor substrate layer over the metal layer, wherein the semiconductor substrate active layer has a second thickness, and a plurality of front side connectors, wherein active circuits in the semiconductor sub...