US Patent Issued to Diodes on March 25 for "Semiconductor structure and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,262,550, issued on March 25, was assigned to Diodes Inc. (Plano, Texas).

"Semiconductor structure and manufacturing method thereof" was invented by Ching-Wen Wang (New Taipei, Taiwan), Jie Li (New Taipei, Taiwan), Ming-Wei Tsai (New Taipei, Taiwan) and Chiao-Shun Chuang (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor structure is provided. A substrate including a first silicon carbide layer and a second silicon carbide layer under the first silicon carbide layer is formed. The substrate includes a unit region and a termination region surrounding the unit region. A first guard ring structure i...