US Patent Issued to Diodes on March 18 for "Manufacturing method for a power MOSFET with gate-source ESD diode structure" (Taiwanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,562, issued on March 18, was assigned to Diodes Inc. (Plano, Texas).

"Manufacturing method for a power MOSFET with gate-source ESD diode structure" was invented by Wan-Yu Kai (New Taipei, Taiwan), Chia-Wei Hu (New Taipei, Taiwan) and Ta-Chuan Kuo (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes growing an epitaxial layer over a substrate, forming a plurality of gates in the epitaxial layer, forming a source in the epitaxial layer, forming a breakdown voltage enhancement and leakage prevention structure comprising a body ring structure in the epitaxial layer, forming a gate-source Electrostatic Discharge (ESD) dio...