ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,364, issued on July 22, was assigned to Diodes Inc. (Plano, Texas).
"Power MOSFET with gate-source ESD diode structure" was invented by Wan-Yu Kai (New Taipei, Taiwan), Chia-Wei Hu (New Taipei, Taiwan) and Ta-Chuan Kuo (New Taipei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus includes a drain and a source on opposing sides of an epitaxial layer, a plurality of gates formed in the epitaxial layer, a source contact connected to the source, a gate contact connected to the plurality of gates, a gate-source electrostatic discharge (ESD) diode connected between the gate contact and the source contact, and a breakdown voltage enhancem...