US Patent Issued to DIODES on Feb. 4 for "Trench MOS rectifier with termination structure" (Taiwanese, British, Chinese, American Inventors)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,218,256, issued on Feb. 4, was assigned to DIODES Inc. (Plano, Texas).

"Trench MOS rectifier with termination structure" was invented by Tao Long (Shanghai), Ze Rui Chen (Plano, Texas), Pin-Hao Huang (New Taipei, Taiwan), Bau-Shun Huang (New Taipei, Taiwan) and Lee Spencer Riley (Lancashire, Great Britain).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes: a substrate, having a cell region and a terminal region, and having a first surface, a second located in the terminal region, and a third surface located in the cell region, the second surface and the third surface being located at different levels; a first trench structu...