US Patent Issued to Diodes on Dec. 2 for "Semiconductor device and processes for making same" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,500, issued on Dec. 2, was assigned to Diodes Inc. (Plano, Texas).

"Semiconductor device and processes for making same" was invented by Kuo-Liang Chao (Chubei, Taiwan) and Pin-Hao Huang (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosure provides a semiconductor package having an isolation structure comprising an isolation trench filled with dielectric material, where the isolation structure traverses the thickness of the isolated semiconductor dies."

The patent was filed on Nov. 4, 2021, under Application No. 17/518,657.

*For further information, including images, charts and tables, please visit: http://patft.uspto.go...