US Patent Issued to Destination 2D on Jan. 20 for "Methods of forming transistor interconnects on top of a semiconductor device substrate" (California, Oregon Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,529,141, issued on Jan. 20, was assigned to Destination 2D Inc. (Milpitas, Calif.).

"Methods of forming transistor interconnects on top of a semiconductor device substrate" was invented by Kaustav Banerjee (Goleta, Calif.), Ravi Iyengar (Milpitas, Calif.) and Brian Cronquist (Klamath Falls, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming transistor interconnects on top of a semiconductor device substrate, the method including: providing a semiconductor device substrate with CMOS transistors and an inter-layer dielectric atop the CMOS transistors; depositing a metal (Ni, Co, Ru, or Mo) catalyst layer atop the inter-layer dielectri...