ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,125, issued on May 20, was assigned to Dephan LLC (Moscow).

"Avalanche photodetector (variants) and method for manufacturing the same (variants)" was invented by Nikolai Afanasevich Kolobov (Moscow), Konstantin Yurevich Sitarskiy (Moscow), Vitalii Emmanuilovich Shubin (Moscow), Dmitrii Alekseevich Shushakov (Moscow) and Sergei Vitalevich Bogdanov (Moscow).

According to the abstract* released by the U.S. Patent & Trademark Office: "Method for manufacturing avalanche photodetector, including forming multiplication layer on wafer; etching closed groove on surface of the multiplication layer, so that depth of the closed groove is greater than or equal to thickness of the multiplicati...