ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,358, issued on Sept. 9, was assigned to DENSO Corp. (Kariya, Japan).
"Semiconductor device" was invented by Hiroto Sugiura (Kariya, Japan) and Masakiyo Sumitomo (Kariya, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a main element and a sense element. Each of the main element and the sense element includes a drift layer, a base layer, an emitter region, a gate insulation film, a gate electrode, and a rear surface layer. The base layer is on the drift layer. The emitter region is at a surface layer portion of the base layer. The gate insulation film is disposed at a surface of the base layer between the emitter...