US Patent Issued to DENSO on Sept. 30 for "Semiconductor device and method for manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,989, issued on Sept. 30, was assigned to DENSO Corp. (Kariya, Japan).

"Semiconductor device and method for manufacturing the same" was invented by Shinichiro Miyahara (Kariya, Japan), Shunsuke Harada (Kariya, Japan) and Tomoo Morino (Kariya, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a vertical semiconductor element having a deep layer, a current dispersion layer, a base region, a high-concentration region, and a trench gate structure. The deep layer has multiple sections being apart to each other in one direction. The current dispersion layer is between adjacent two of the sections of the deep layer. The h...