US Patent Issued to DENSO on Sept. 23 for "Semiconductor device and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,304, issued on Sept. 23, was assigned to DENSO Corp. (Kariya, Japan).

"Semiconductor device and method of manufacturing the same" was invented by Kenta Gouda (Kariya, Japan), Yusuke Nonaka (Kariya, Japan) and Takeshi Hagino (Kariya, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device has a cell portion and a peripheral portion. The cell portion includes a semiconductor substrate, a first impurity region, a second impurity region, and a contact region for the second impurity region. The semiconductor substrate has a drift layer. The first impurity region is on the drift layer. The second impurity region is on a surface layer ...