ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,288, issued on Sept. 23, was assigned to DENSO Corp. (Kariya, Japan).
"Semiconductor device and method for manufacture thereof" was invented by Satoshi Kuwano (Toyota, Japan), Tsuyoshi Nishiwaki (Toyota, Japan) and Yuta Furumura (Toyota, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a semiconductor substrate; a trench gate portion on the semiconductor substrate; a surface electrode covering an upper side of the semiconductor substrate; and an interlayer insulating film insulating the trench gate portion from the surface electrode. The semiconductor substrate includes: a drift region; a body region above the d...