ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,417,909, issued on Sept. 16, was assigned to DENSO Corp. (Kariya, Japan).

"Surface processing apparatus and surface processing method for SiC substrate" was invented by Kazufumi Aoki (Kariya, Japan), Naoki Maruno (Kariya, Japan), Bahman Soltani (Kariya, Japan), Yuya Kato (Kariya, Japan), Kyohei Kotake (Kariya, Japan), Shinji Mukota (Kariya, Japan), Manabu Tomisaka (Kariya, Japan), Yasuo Ishihara (Kariya, Japan), Shusaku Nakazawa (Kariya, Japan) and Tetsuji Yamaguchi (Kariya, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a surface processing apparatus and a surface processing method for a SiC substrate using anodization. The surface p...