US Patent Issued to DENSO on Oct. 7 for "Semiconductor device and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,670, issued on Oct. 7, was assigned to DENSO Corp. (Kariya, Japan).

"Semiconductor device and method of manufacturing the same" was invented by Kazuo Akamatsu (Kariya, Japan) and Tsuyoshi Fujiwara (Kariya, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor substrate and an electrode. The electrode is electrically connected to the semiconductor substrate and located on the semiconductor substrate. The electrode has a lower metal layer, an upper metal layer and an intermediate layer. The lower metal layer is located at a side closer to the semiconductor substrate. The upper metal layer is located above ...