US Patent Issued to DENSO on Oct. 7 for "Semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,620, issued on Oct. 7, was assigned to DENSO Corp. (Kariya, Japan).

"Semiconductor device" was invented by Shin Takizawa (Kariya, Japan), Yusuke Nonaka (Kariya, Japan), Kenta Gouda (Kariya, Japan) and Shunsuke Harada (Kariya, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a cell portion and a peripheral portion. The cell portion has a semiconductor element including a drift layer, a first impurity region, a second impurity region, trench-gate structures, a high-concentration layer, an interlayer insulating film, a first electrode and a second electrode. The interlayer insulating film is located on the trench-gate...