US Patent Issued to DENSO on Oct. 21 for "Method for predicting failure of semiconductor device, and semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,449,471, issued on Oct. 21, was assigned to DENSO Corp. (Kariya, Japan).

"Method for predicting failure of semiconductor device, and semiconductor device" was invented by Masataka Deguchi (Kariya, Japan), Junya Muramatsu (Nagakute, Japan), Keita Kataoka (Nagakute, Japan), Katsuhiro Kutsuki (Nagakute, Japan), Isao Aoyagi (Nagakute, Japan), Takashi Tominaga (Nagakute, Japan), Ryosuke Okachi (Nagakute, Japan) and Takashi Kohyama (Toyota, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Main cells that constitute a semiconductor element having a trench gate structure include first cells, and second cells having a structure in which gate insulating films...