US Patent Issued to DENSO on March 4 for "Silicon carbide semiconductor device with overlapping electric field relaxation regions and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,910, issued on March 4, was assigned to DENSO Corp. (Kariya, Japan).

"Silicon carbide semiconductor device with overlapping electric field relaxation regions and method of manufacturing the same" was invented by Shinichirou Miyahara (Kariya, Japan), Masatoshi Tsujimura (Nagakute, Japan) and Yusuke Yamashita (Nagakute, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide semiconductor device includes an electric field relaxation layer disposed in a drift layer. The electric field relaxation layer includes a first region having a second conductivity type and disposed at a position deeper than trenches, and a second region having the ...