US Patent Issued to DENSO on March 18 for "Silicon carbide single crystal wafer, and methods for manufacturing silicon carbide single crystal ingot and the silicon carbide single crystal wafer" (Japanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,252,808, issued on March 18, was assigned to DENSO Corp. (Kariya, Japan).

"Silicon carbide single crystal wafer, and methods for manufacturing silicon carbide single crystal ingot and the silicon carbide single crystal wafer" was invented by Isaho Kamata (Tokyo), Hidekazu Tsuchida (Tokyo), Norihiro Hoshino (Tokyo), Yuichiro Tokuda (Kariya, Japan) and Takeshi Okamoto (Kariya, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a silicon carbide single crystal wafer, a dislocation density contained therein is 3500 dislocations/cm2 or less, and a difference of the dislocation density among a wafer central part, a wafer peripheral part and a wafer inte...