ALEXANDRIA, Va., March 19 -- United States Patent no. 12,252,791, issued on March 18, was assigned to DENSO Corp. (Kariya, Japan).
"Apparatus for manufacturing semiconductor device" was invented by Hiroaki Fujibayashi (Kariya, Japan), Yuya Koide (Kariya, Japan) and Hirotaka Mori (Nissin, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus manufactures a semiconductor device. The apparatus includes a film formation device, a first detector and a second detector. The film formation device forms an embedded layer for embedding a trench disposed at a substrate in the semiconductor device. The first detector detects a state of a first region of the substrate where the trench is disposed. The second ...