US Patent Issued to DENSO on June 3 for "Semiconductor device and method for manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,177, issued on June 3, was assigned to DENSO Corp. (Kariya, Japan).

"Semiconductor device and method for manufacturing the same" was invented by Hirofumi Kida (Toyota, Japan), Hidemoto Tomita (Toyota, Japan), Tomohiko Mori (Nagakute, Japan) and Hideya Yamadera (Nagakute, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a nitride semiconductor layer, a source electrode, a drain electrode, and an insulating gate portion. The nitride semiconductor layer has an element part and a peripheral withstand voltage part. The source electrode is disposed adjacent to a first main surface of the nitride semiconductor layer. The ...