ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,944, issued on July 15, was assigned to DENSO Corp. (Kariya, Japan).
"Semiconductor device" was invented by Kenji Kouno (Kariya, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a source electrode, a drain electrode and a gate. The gate controls a current flowing between the source electrode and the drain electrode. Capacitance between the gate and the drain electrode is first capacitance. Capacitance between the gate and the source electrode is second capacitance. A sum of the first capacitance and the second capacitance is equal to third capacitance. Total switching loss is a sum of first switching loss and seco...