US Patent Issued to DENSO on Jan. 28 for "Silicon carbide semiconductor device and method for manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,902, issued on Jan. 28, was assigned to DENSO Corp. (Kariya, Japan).

"Silicon carbide semiconductor device and method for manufacturing the same" was invented by Masato Noborio (Kariya, Japan), Takehiro Kato (Toyota, Japan) and Yusuke Yamashita (Nagakute, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a semiconductor device, a source region is made of an epitaxial layer so as to reduce variation in thickness of a base region and variation in a threshold value. Outside of a cell part, a side surface of a gate trench is inclined relative to a normal direction to a main surface of a substrate, as compared with a side surface of a gate trench i...