ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,615, issued on Aug. 12, was assigned to DENSO Corp. (Kariya, Japan).
"Semiconductor device" was invented by Hiromitsu Tanabe (Kariya, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "In an IGBT region of a semiconductor device, a barrier region is disposed above a drift layer, and a contact trench is disposed between adjacent gate trenches in a semiconductor substrate. A first electrode is embedded in the contact trench. A connecting region is disposed between a bottom surface of the contact trench and the barrier region, and is connected to the barrier region and the first electrode. Further, the emitter region and the contact region are arrang...