ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,593, issued on April 22, was assigned to DENSO Corp. (Kariya, Japan).
"Semiconductor device" was invented by Shuichi Toriyama (Kariya, Japan), Masakiyo Sumitomo (Kariya, Japan) and Tasbir Rahman (Toyota, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor substrate, a contact region, a carrier suppression region and an electrode. The semiconductor substrate is shared by an insulated gate bipolar transistor (IGBT) region with an IGBT element and a freewheeling diode (FWD) region with an FWD element. The carrier suppression region is exposed from a surface of the semiconductor substrate in the IGBT regio...