ALEXANDRIA, Va., April 2 -- United States Patent no. 12,266,863, issued on April 1, was assigned to DENSO Corp. (Kariya, Japan).
"High-frequency device" was invented by Kazumasa Sakurai (Nisshin, Japan), Kazushi Kawaguchi (Kariya, Japan) and Junzoh Tsuchiya (Kariya, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A dielectric substrate includes a plurality of pattern layers. A ground plate to be used as a ground plane is formed in a first pattern layer of the dielectric substrate. A functional unit includes a plurality of conductive patches that are parasitic patterns formed in a second pattern layer different from the first pattern layer. The conductive patches are periodically arranged, and sides of t...