US Patent Issued to DENSO, TOYOTA JIDOSHA, MIRISE Technologies on Sept. 9 for "Manufacturing method of semiconductor device and semiconductor wafer" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,345, issued on Sept. 9, was assigned to DENSO Corp. (Kariya, Japan), TOYOTA JIDOSHA K.K. (Toyota, Japan) and MIRISE Technologies Corp. (Nisshin, Japan).

"Manufacturing method of semiconductor device and semiconductor wafer" was invented by Hitoshi Fujioka (Nisshin, Japan), Takeshi Koshiba (Nisshin, Japan), Norihiro Togawa (Nisshin, Japan) and Takuji Arauchi (Nisshin, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A manufacturing method of a semiconductor device includes preparing a silicon carbide substrate, growing an epitaxial layer, and forming a structure. The silicon carbide substrate has an upper surface on which an alignment mark havin...