US Patent Issued to DENSO, TOYOTA JIDOSHA, MIRISE Technologies on Sept. 23 for "Silicon carbide semiconductor device including a side silicide layer and method for manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,329, issued on Sept. 23, was assigned to DENSO Corp. (Kariya, Japan), TOYOTA JIDOSHA K.K. (Toyota, Japan) and MIRISE Technologies Corp. (Nisshin, Japan).

"Silicon carbide semiconductor device including a side silicide layer and method for manufacturing the same" was invented by Hiroki Tsuma (Nisshin, Japan), Yuji Nagumo (Nisshin, Japan), Masashi Uecha (Nisshin, Japan) and Teruaki Kumazawa (Nisshin, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide semiconductor device includes a silicon carbide semiconductor layer and a side silicide layer. The silicon carbide semiconductor layer includes a silicon carbide single crystal and ha...