US Patent Issued to DENSO, TOYOTA JIDOSHA, MIRISE Technologies on Sept. 23 for "Semiconductor device and method for manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,319, issued on Sept. 23, was assigned to DENSO Corp. (Kariya, Japan), TOYOTA JIDOSHA K.K. (Toyota, Japan) and MIRISE Technologies Corp. (Nisshin, Japan).

"Semiconductor device and method for manufacturing the same" was invented by Yohei Iwahashi (Nisshin, Japan) and Jun Saito (Nisshin, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a semiconductor device, a first deep layer has a high-concentration region and a low-concentration region in a concentration profile of an impurity concentration along a depth direction. The high-concentration region has a high concentration peak at which an impurity concentration is maximum, and includes a regi...