ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,496, issued on Sept. 23, was assigned to DENSO Corp. (Kariya, Japan), TOYOTA JIDOSHA K.K. (Toyota, Japan) and MIRISE Technologies Corp. (Nisshin, Japan).
"Manufacturing method of semiconductor device" was invented by Yuji Nagumo (Nisshin, Japan), Masashi Uecha (Nisshin, Japan), Hiroki Tsuma (Nisshin, Japan) and Teruaki Kumazawa (Nisshin, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "In a manufacturing method of a semiconductor device, a semiconductor wafer that is made of a semiconductor material harder than silicon and has a first surface and a second surface opposite to each other is prepared, a roughened layer is formed by grinding the se...