ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,095, issued on Sept. 16, was assigned to DENSO Corp. (Kariya, Japan), TOYOTA JIDOSHA K.K. (Toyota, Japan) and MIRISE Technologies Corp. (Nisshin, Japan).
"Semiconductor device" was invented by Taiga Goto (Nisshin, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "In a semiconductor device, a semiconductor substrate has an element region and a peripheral region, and trenches are defined on an upper surface of the semiconductor substrate. The trenches extend in a first direction, and are arranged at intervals in a second direction. The element region includes an n-type source region, a p-type contact region, a p-type body region, an n-type drift r...