ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,656, issued on Oct. 7, was assigned to DENSO Corp. (Kariya, Japan), TOYOTA JIDOSHA K.K. (Toyota, Japan) and MIRISE Technologies Corp. (Nisshin, Japan).
"Semiconductor device and manufacturing method of the same" was invented by Shinichi Hoshi (Nisshin, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor substrate including a semiconductor element, a first surface-side electrode disposed on a first surface of the semiconductor substrate, and a second surface-side electrode disposed on a second surface of the semiconductor substrate. The semiconductor substrate includes a gallium nitride substrate and fi...