ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,791, issued on Nov. 4, was assigned to DENSO Corp. (Kariya, Japan), TOYOTA JIDOSHA K.K. (Toyota, Japan) and MIRISE Technologies Corp. (Nisshin, Japan).
"Semiconductor device" was invented by Masato Noborio (Nisshin, Japan), Tomofumi Niibayashi (Nisshin, Japan) and Jun Saito (Nisshin, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a drift layer of a first conductivity type, a first electrode, a second electrode, a plurality of gate electrodes, and a plurality of repeat regions of a second conductivity type. When center lines respectively passing through centers of the gate electrodes in an arrangement...