US Patent Issued to DENSO, TOYOTA JIDOSHA, MIRISE Technologies on Nov. 11 for "Silicon carbide semiconductor device including semiconductor element having gate-trench structure" (Japanese Inventor)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,335, issued on Nov. 11, was assigned to DENSO Corp. (Kariya, Japan), TOYOTA JIDOSHA K.K. (Toyota, Japan) and MIRISE Technologies Corp. (Nisshin, Japan).

"Silicon carbide semiconductor device including semiconductor element having gate-trench structure" was invented by Jun Saito (Nisshin, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide semiconductor device includes a semiconductor element having a first-conductivity-type region, a gate-trench structure, an interlayer insulation film, a first electrode, and a recess. The gate-trench structure has a gate trench. The first electrode includes a metal layer, a barrier metal, an elec...