ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,339, issued on July 22, was assigned to DENSO Corp. (Kariya, Japan), TOYOTA JIDOSHA K.K. (Toyota, Japan) and MIRISE Technologies Corp. (Nisshin, Japan).
"Surface treatment method for gallium oxide-based semiconductor substrate and semiconductor device" was invented by Katsuhiro Kutsuki (Nagakute, Japan), Keita Kataoka (Nagakute, Japan), Daigo Kikuta (Nagakute, Japan), Hiroki Miyake (Nisshin, Japan), Shuhei Ichikawa (Nisshin, Japan) and Yoshitaka Nagasato (Nisshin, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "In a surface treatment method for a gallium oxide-based semiconductor substrate, a surface of the gallium oxide-based semiconductor sub...