US Patent Issued to DENSO, TOYOTA JIDOSHA, MIRISE Technologies on April 15 for "Method of manufacturing silicon carbide semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,274, issued on April 15, was assigned to DENSO Corp. (Kariya, Japan), TOYOTA JIDOSHA K.K. (Toyota, Japan) and MIRISE Technologies Corp. (Nisshin, Japan).

"Method of manufacturing silicon carbide semiconductor device" was invented by Hidemoto Tomita (Nisshin, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a silicon carbide semiconductor device includes forming a constituent layer and forming a super junction structure. The formation of the super junction structure includes forming a film-forming mask on the constituent layer, forming an opening portion at the film-forming mask, forming a mask-forming trench at the const...