US Patent Issued to DENSO, TOYOTA JIDOSHA, MIRISE Technologies, Kochi Prefectural Public University on April 22 for "Nitride semiconductor device and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,619, issued on April 22, was assigned to DENSO Corp. (Kariya, Japan), TOYOTA JIDOSHA K.K. (Toyota, Japan), MIRISE Technologies Corp. (Nisshin, Japan) and Kochi Prefectural Public University Corp. (Kochi, Japan).

"Nitride semiconductor device and method of manufacturing the same" was invented by Takashi Okawa (Nisshin, Japan), Hidemoto Tomita (Nisshin, Japan), Toshiyuki Kawaharamura (Kami, Japan) and Li Liu (Kami, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a nitride semiconductor device includes formation of a gate insulation film above a nitride semiconductor layer. The formation of the gate insulation film includ...